Two methods were proposed and implemented for the fabrication of channel waveguides in an Er-doped Tellurite glass. In the first method, channel waveguides were fabricated by implanting 1.5 MeV and 3.5 MeV energy N⁺ ions through a special silicon mask to the glass sample at various fluences. Those waveguides implanted at a fluence of 1.0 × 10¹⁶ ions/cm² operated up to 980 nm, and showed green upconversion of the Erbium ions. In the second method, channel waveguides were directly written in the Er³⁺: TeO₂W₂O₃ glass using an 11 MeV C⁴⁺ ion microbeam with fluences in the range of 1 · 10¹⁴–5 · 10¹⁶ ions/cm². The waveguides worked in single mode regime up to the 1540 nm telecom wavelength. Propagation losses were reduced from the 14 dB/cm of the as-irradiated waveguides by stepwise thermal annealing to 1.5 dB/cm at λ = 1400 nm.